Web26 jun. 2014 · The Varian Semiconductor Equipment business unit of Applied Materials has employed the VIISta platform architecture to provide production level throughputs of high energy hydrogen and helium for both standard and thin wafer substrates. Improvements to the implanter architecture will be described. Web2 dagen geleden · Electoanalysis of metal ions in solution using polymer-modified ultramicroelectrodes; Formation of shallow P-type layers by dual-implantation of boron and hydrogen ions; Photocatalytic Splitting of H2S to Produce Hydrogen by Gas-Solid Phase Reaction; Performance of four various shapes of photocatalytic reactors with respect to …
Hochschulschriften online nicht zugänglich / Understanding ion …
WebBoron Ion Implantation into Silicon by Use of the Boron Vacuum-Arc Plasma Generator (p. 261) by Williams, J M Micro-patterned porous silicon using proton beam writing (p. 269) by Breese, M B H Grazing Incidence angle X-ray Diffraction of implanted stainless steel : comparison between simulated data and experimental data (p. 275) Webfor hydrogen deposited region in the alloy decreased by H+ion irradiation [9,10]. Such as hydrogen trapping by vacancy type defects possibly suppress the hydrogen induced embrittlement. ... Cathodic charged hydrogen implantation was performed for samples both before and af-ter electron irradiation in a 0.001mol S and 0.01wt%N SCN … it ends with me book
Investigation of defects formed by ion implantation of H2+ into silicon
WebThe effects of hydrogen implantation on the structural and electrical properties of nickel silicide have been investigated. Ni films (30 nm) are electron-beam-evaporated on Si substrates, after which plasma immersion ion implantation is used to introduce hydrogen ions into the Ni films at an energy of 350 eV to a dose of 1 × 10 16 cm-2.For nickel … Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials … Meer weergeven Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy or … Meer weergeven Doping Semiconductor doping with boron, phosphorus, or arsenic is a common application … Meer weergeven Ion beam mixing Ion implantation can be used to achieve ion beam mixing, i.e. mixing up atoms of different … Meer weergeven Hazardous materials In fabricating wafers, toxic materials such as arsine and phosphine are often used in the ion implanter process. Other common carcinogenic, corrosive, flammable, or toxic elements include antimony, arsenic, phosphorus, … Meer weergeven Tool steel toughening Nitrogen or other ions can be implanted into a tool steel target (drill bits, for example). … Meer weergeven Crystallographic damage Each individual ion produces many point defects in the target crystal on impact such as vacancies and interstitials. Vacancies are crystal lattice points unoccupied by an atom: in this case the ion collides with a target atom, … Meer weergeven • Stopping and Range of Ions in Matter Meer weergeven Web1 nov. 2001 · In the conventional ion-cut process, hydrogen ion implantation is used to initiate layer delamination at a desired depth, which leads to ion damage in the … it ends with me